[1] Zheng, W., Lin, R., Ran, J., Zhang, Z., Ji, X., and Huang, F., “Vacuum-Ultraviolet Photovoltaic Detector”, ACS Nano, Vol. 12, No. 1, pp. 425–431 2018.
[2] Ulmer, M.P. “Future UV Detectors for Space Applications”, Proceedings of The International Society for Optical Engineering (SPIE), Strasbourg, France, 2006.
[3] Kozlovsky, A., Safargaleev, V., Ostgaard, N., Turunen, T., Koustov, A., Jussila, J., and Roldugin, A., “On the Motion of Dayside Auroras Caused by a Solar Wind Pressure Pulse”, Ann. Geophys. Vol. 23, pp. 509-521, 2005.
[4] Available: https://spaceplace.nasa.gov/aurora/.
[5] Najmzadeh, S., “Detection by CCD and Its Applications”, M.Sc. Thesis, Department of Basic Sciences, Bu-Ali Sina University, Hamedan, Iran, 2010 (In Persian).
[6]Penquer, A., Gilard, O., Bardoux, A., Ecoffet, R., and Auvergne, M., “Radiation Effects on Image Sensors”, International Conference on Space Optics 2012, Ajaccio, Corsica, France, 2012.
[7] Rivera, C., Pereiro, J., Navarro, Á., Muñoz, E., Brandt, O., and Grahn, H.T., “Advances in Group-III-Nitride Photodetectors”, The Open Electrical & Electronic Engineering Journal, Vol. 4, pp. 1–9, 2010.
[8] Razeghi, M. and Rogalski, A., “Semiconductor Ultraviolet Detectors”, J. Appl. Phys., Vol. 79 , No. 10, pp. 7433-7473, 1996.
[9] Walker, D. and Razeghi, M., “The Development on Nitride-based UV Photodetectors”, Opto-Electronics Review, Vol. 8, No. 1, pp. 25-42, 2000.
[10] Klein, C.A., “Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors”, J. Appl. Phys., Vol. 39, No. 4, pp. 2029-2038, 1968.
[11] Kheirkhah, M., “Design, Simulation and Manufacturing of MSM Ultraviolet Detector Using Zinc Oxide Nanoparticles”, M.Sc. Thesis, Department of Electrical and Electronics Engineering, Sistan and Baluchestan University, Zahedan, Iran, 2016 (In Persian).
[12] Zubialevich, V.Z., Dinh, D.V., Alam, S.N. Schulz, S., O’Reilly, E.P., and Parbrook, P.J., “Strongly Nonparabolic Variation of the Band Gap in InxAl1-xN with Low Indium Content”, Semicond. Sci. Technol. Vol. 31, No. 2, pp. 25-36, 2016.
[13] BenMoussa, A., Soltani, A., Schühle, U., Haenen, K., Chong, Y.M., Zhang, W.J., Dahal, R., Lin, J.Y., Jiang, H.X., Barkad, H.A., BenMoussa, B., Bolsee, D., Hermans, C., Kroth, U., Laubis, C., Mortet, V., De Jaeger, J.C., Giordanengo, B., Richter, M., Scholze, F., and Hochedez, J.F., “Recent Developments of Wide-bandgap Semiconductor Based UV Sensors”, Diam. Relat. Mater. Vol. 18, No's. 5-8, 2009.
[14] Kamata, H., Ishii, Y., Mabuchi, T., Naoe, K., Ajimura, S., and Sanada, K. “Single Crystal Growth of Aluminum Nitride”, Fujikura Technical Review, Vol. 16, No. 2, pp. 41-45, 2009.
[15] Zhong, F., Huang, C., Danylyuk, Y.V., and Auner, G.W., “Development of an AlN Deep UV Detector for Space Application”, Mat. Res. Soc., Vol. 639, pp. 2–6, 2001.
[16] Yanagida, T., Fujimoto, Y., Kawaguchi, N., and Yanagida, S., “Dosimeter properties of AlN”, Journal of the Ceramic Society of Japan, Vol. 121, No. 1421, pp. 988-991, 2013.
[17] Giurgiutiu, V., Postolache, C., and Tudose, M., “Radiation, Temperature, and Vacuum Effects on Piezoelectric Wafer Active Sensors”, Smart Mater. Struct., Vol. 25, No. 3, pp. 1-25, 2016.
[18]Bogusławski, P., “Doping Properties of C, Si, and Ge Impurities in GaN and AlN”, The American Physical Society, Vol. 56, No. 15, pp. 9496–9505, 1997.
[19] Wang, J., Xu, F., He, C., Zhang, L., Lu, L., Wang, X., Qin, Z., and Shen, B., “High Quality AlN Epilayers Grown on Nitrided Sapphire by Metal Organic Chemical Vapor Deposition”, Sci. Rep,Vol. 7, pp.1-7, 2017.
[20] Rashidi, A.M., Moradian, R., and Rahimimoghadam, P., “A Rreview of the Types of Aluminum Oxide Nanostructures and the Different Methods of Synthesizing These Nanostructures”, Journal of Iranian Ceramic Society, Vol. 51, No. 3, pp.45-62, 2017 (In Persian).
[21] Li, J. and Fan, Z.Y., “200 nm Deep Ultraviolet Photodetectors Based on AlN”, Applied Physics Letters, Vol. 89, pp. 1-3, 2006.
[22] Pantha, B.N., Dahal, R., Nakarmi, M.L., Li, J., Lin, J.Y., and Jiang, H.X., “Correlation Between Optoelectronic and Structural Properties and Epilayer Thickness of AlN,”Applied Physics Letters, vol. 241101, no. 2007, pp. 2005–2008, 2010.
[23] Lohmeyer, W.Q., and Cahoy, K., “Space Radiation Environment Impacts on High Power Amplifiers and Solar Cells On-board Geostationary Communications Satellites”,
Space Weather,
Vol. 11, No. 8, pp. 476-488, 2015.
[24] Zamani Moghaddam, S., Amjadifard, R., and Khoshsima, M., “Simulation of Total Ionizing Dose Radiation Effect on Telecommunication Satellite by GEANT4”, Iranian Journal of Radiation Safety and Measurement, Vol. 4, No. 3, pp. 29-36, 2016 (In Persian).
[25] BenMoussa, A., Soltani, A., Gerbedoen, J.C., Saito, T., Averin, S., Gissot, S., Giordanengo, B., Berger, G., Kroth, U., De Jaeger, J.C., and Gottwald, A. “Developments,Characterization and Proton Irradiation Damage Tests of AlN Detectors for VUV Solar Observations”, Nucl. Inst. Methods Phys. Res. B, vol. 312, pp. 48–53, 2013.
[26] Xin, G.L., Li, W.M., and Tian, Z.P.Y., “Effects of High-energy Proton Irradiation on Separate Absorption and Multiplication GaN Avalanche Photodiode”, Nucl. Sci. Tech. Vol. 3, pp. 1–8, 2018.
[27] Chen, X., Zhu, H., Cai, J., and Wu, Z., “High-performance 4H-SiC-based Ultraviolet p-i-n Photodetector”, J. Appl. Phys., Vol. 102, No. 2, pp. 1-4, 2007.
[28] Undaram, K.A.B.S., “Boron Carbon Nitride Based Metal-insulator-metal UV Detectors for Harsh Environment Applications” , Optics Letters, Vol. 41, No. 18, pp. 4249-4252, 2016.
[29] Hochedez, J., Bergonzo, P., Castex, M., Dhez, P., and Hainaut, O., “Diamond UV Detectors for Future Solar Physics Missions”, Diamond and Related Materials, Vol. 10, No's. 3–7, pp. 673–680, 2001.
[30] Malinowski, P.E., Duboz, J.Y., De Moor, P., Minoglou, K., John, J., Martin Horcajo, S., Semond, F., Frayssinet, E., Verhoeve, P., Esposito, M., Giordanengo, B., BenMoussa, A., Mertens, R., and Van Hoof, C., “Extreme Ultraviolet Detection Using AlGaN-on-Si Inverted Schottky Photodiodes”, Appl. Phys. Lett., Vol. 98, No. 14, pp. 1-4 2011.
[31] Soltani, A.,
Barkad, H.A., Mattalah, M., Benbakhti, B., De Jaeger, J.C., Chong, Y.M., Zou, Y.S., Zhang, W.J., Lee, S.T., BenMoussa, A., Giordanengo, B., and Hochedez, J.F., “193 nm Deep-ultraviolet Solar-blind Cubic Boron Nitride Based Photodetectors”, Applied Physics Letters, Vol. 92, No. 5, pp. 1–4, 2008.
[32] Moellea, C., Klosea, S., Szücs, F., Fecht, H.J., Johnston, C., Chalker, P.R., and Werner, M., “Measurement and Calculation of the Thermal Expansion Coefficient of Diamond”, Diam. Relat. Mater., Vol. 6, No's. 5–7, pp. 839-842, 1997.
[33] Zheng, W., Lin, R., Zhang, Z., and Huang, F., “Vacuum-Ultraviolet Photodetection in Few-Layered h-BN”, ACS Appl. Mater. Interfaces, Vol. 10, No. 32, pp. 27116–27123, 2018.
[34] [Online].Available:https://en.wikipedia.org/wiki/ Quantum_efficiency.
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